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Laser pulse ablation of Si wafer
Ablation of a silicon substrate with laser pulses. This is an old feasibility study (not validated!). Simulation carried out at the Research Unit of Photonic Technologies (Vienna University of Technology).
http://llf.ift.tuwien.ac.at
Process parameters:
λ: 355nm,
spot size: 10µm,
pulse energy: 50µJ,
pulse length: 50ns,
pulse frequency: 250kHZ,
path: 4 pulses,
scanning speed: 670mm/s (typo in video)
The simulation environment used was OpenFOAM (https://openfoam.org/).
Silicon Wafer Production
Silicon Wafer Production: Czochralski growth of the silicon ingot, wafer slicing, wafer lapping, wafer etching and finally wafer polishing
Destroy single crystalline Si wafer
I wanted to find out the orientation of this single crystalline Si wafer.
Ablation of a silicon substrate with laser pulses. This is an old feasibility study (not validated!). Simulation carried out at the Research Unit of Photonic Technologies (Vienna University of Technology).
http://llf.ift.tuwien.ac.at
Process parameters:
λ: 355nm,
spot size: 10µm,
pulse energy: 50µJ,
pulse length: 50ns,
pulse frequency: 250kHZ,
path: 4 pulses,
scanning speed: 670mm/s (typo in video)
The simulation environment used was OpenFOAM (https://openfoam.org/).
Silicon Wafer Production
Silicon Wafer Production: Czochralski growth of the silicon ingot, wafer slicing, wafer lapping, wafer etching and finally wafer polishing
Destroy single crystalline Si wafer
I wanted to find out the orientation of this single crystalline Si wafer.
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